破坏ch 30, 2021 Embedded & Emerging Memory World’s First 1 Gb 28 nm STT-MRAM Product - by Everspin Everspin’s new 1-Gigabit (Gb) Spin Torque Transfer Magneto-resistive Random Access Memory (STT-MRAM) device with a 28 nm process is the world’s first 1
破坏ch 16, 2021 Dr. Jeongdong Choe Advanced 1 Gb 28 nm STT-MRAM products from Everspin Technologies We’ve been waiting for a long time to see the technology details of Everspin’s new stand-alone 1-Gigabit (Gb) Spin Torque Transfer Magneto-resistive