GeneSiC G2R120MT33J 3300V 120 mΩ SiC MOSFET Power Floorplan Analysis

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产品代码
PFR-2102-801
Release Date
Availability
In Creation
Product Item Code
GSC-G2R120MT33J
Device Manufacturer
GeneSiC
Device Type
场效应晶体管
Subscription
Power Semiconductor
Channel
Power Semiconductor - Silicon Carbide (SiC) Floorplan
Report Code
PFR-2102-801
GeneSiC G2R120MT33J 3300V 120 mΩ SiC MOSFET First commercially available 3.3 kV SiC device 20V gate drive, indicates reliable robust gate oxide region
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