产品代码
PEF-1905-802
一个vailability
Published
Product Item Code
ROH-SCT3022ALGC11
Device Manufacturer
罗门哈斯
Device Type
SiC Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Power Essentials
Report Code
PEF-1905-802
This report presents a Power Essentials analysis of the Rohm Semiconductor SCT3022ALGC11 SiC MOSFET device. The Power Essentials (PEF) deliverable includes a one-page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders:
The Power Essentials deliverable provides basic competitive benchmarking information and enables cost-effective tracking of multiple competitors’ technology.
- Package X-rays, die photographs, non-invasive optical photographs of the die features
- Scanning electron microscopy (SEM) plan-view images of the device delayered to the gate level
- Exploratory cross-sectional SEM images of the device structure
- Detailed cross-sectional transmission electron microscope (TEM) images of the device structure
- The image set for a standard PEF project is derived from a delayered sample for SEM planar analysis, a single plane of cross-sectioning for SEM structural analysis and a single TEM sample for the detailed structural analysis. Value add information, such as additional planes of cross-sectioning, may be included on a case-by-case basis.
The Power Essentials deliverable provides basic competitive benchmarking information and enables cost-effective tracking of multiple competitors’ technology.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).