SK hynix 96L 3D PUC NAND分析

SK海力士96L 3D PUC NAND

SK海力士96L 3D PUC NAND

Among memory manufacturers worldwide SK hynix currently holds the 5th position in NAND Flash market share, with 10.3%. They are the latest to release a 9X-layer NAND solution, with the SK hynix 96L 3D PUC NAND.

SK-hynix'96L的3D-PUC NAND-flash设备的开发遵循了与Intel/Micron的CUA(CMOS下阵列)类似的方法过程。分开来自Intel/Micron的SK hynix是唯一一家堆叠存储单元阵列和外围电路的制造商。他们把他们的解决方案称为4D与非因为它结合了3D电荷陷阱闪存技术(CTF)和外围下单元技术(PUC)。

skhynix声称,他们的96层设备可以实现49%的比特密度比他们以前的72层3D NAND产品提高。将SK hynix 96L芯片与之前的72L解决方案进行比较时,我们看到每个芯片的GB数增加,位密度增加,页面大小增加,写入速度加快,读取速度加快,并且整体芯片缩小。

TechInsights公司is conducting a full circuit analysis of this part. Additional analysis including process and floorplan reports, and more will also be done. Our analysis brief includes:

  • 详细的SSD板和阵列/外围芯片照片
  • 带注释的高分辨率横截面图像
  • Details of the comparison between SK hynix 72L and 96L 3D NAND solutions
  • Intel/Micron和SK hynix 96L解决方案的比较

进一步了解我们的内存订阅对DRAM、NAND和新兴存储技术进行了分析、总结和综合。

SK hynix 96L PUC 3D NAND分析

下载our SK hynix 96L PUC 3D NAND analysis, complete with a market overview, annotated high-resolution cross-section images, detailed SSD board and array/periphery die photos, and an overview of our analysis process.

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