Choe Jeongdong博士是TechInsights的高级技术研究员，在DRAM、（V）NAND、SRAM和逻辑器件的半导体工艺集成方面拥有近30年的经验。他定期向TechInsights Memory用户提供博客内容。
10月ober 8, 2020
三星最终发布了128L（136T）的V6 V-NAND，其中每个垂直NAND串的总门数为136（136T）。与三星V5 92L V-NAND相比，共增加了36个堆叠门。三星980 Pro PCIe 4.0 NVMe M.2 SSD产品使用其新一代3D NAND 128L。历史上，三星在Pro SSD系列中采用了MLC NAND，例如，970 Pro SSD采用MLC（64L），而Evo和Evo+则保持TLC（64L和92L）。然而，980 Pro转为TLC（128L）。
The 256Gb die floor plan (Figure1) shows a four-plane-die arranged in a row, which is unique for 3D NAND die design. 136 gates including 5 dummy WLs and 3 selectors stacked for NAND strings and vertical channel (VC) holes are integrated by a single VC etching process, which means they keep 1-Tier (deck) structure with a very high aspect ratio (HAR) plasma etching process different from KIOXIA/WDC, SK Hynix and Micron/Intel’s 2 Tier process. Samsung keeps a SEG process for GSL channel area, and W CSL as well.
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