12月ember 21, 2020 Stephen Russell Toshiba Integrated Diode into SiC MOSFET Every silicon carbide (SiC) manufacturer seemingly has their own approach to FET fabrication. Be it planar, trench, JFET, etc. there is no dominant design throughout the
Introduction The world of LIDAR sensing is evolving. Rotating turret LiDARs are commonplace for applications such as autonomous driving (see our Automotive LIDAR teardown subscription), but they are being displaced by a new generation of solid-state
Shannon 5800 55M5800A01 As the industry expands its use of 5G, Samsung continues to innovate in the area of mobile communication technologies, including RF transceivers and phased array solutions for mmWave along with 5G-embedded mobile processors
How many layers can 3D flash memory stack? Just as skyscrapers cannot be piled up indefinitely, the number of layers of 3D flash memory is also limited.
Posted: October 31, 2019 Contributing Author: Sinjin Dixon-Warren Silicon carbide (SiC) is a widely used industrial material. Widescale production by the Carborundum Company started in 1893 following the discovery of the Acheson process, which is
4-Part Blog Series: The state of the art of smartphone imagers Part 2: Pixel Scaling and Scaling Enablers Posted: July 16, 2019 Contributing Author: Ray Fontaine Content adapted from TechInsights’ paper for the International Image Sensors Workshop
Posted: June 11, 2019 Ambiq Micro Apollo 3 Blue Ultra-Low Power MCU The MCU marketplace is crowded and competitive, with semiconductor companies globally increasing R&D spend in this technology area; this market is forecast to reach ~$20B USD in 2019
Posted: June 7, 2019 Samsung LPDDR4X 17 nm 1Y Samsung DDR4 17 nm 1Y Micron MT40A2G4SA-062E 8Gb DDR4 The top 3 DRAM manufacturers (Samsung, SK hynix, and Micron) reached sub-20 nm in 2017 and 2018 with the introduction of 1x. A new milestone was
Posted: April 10, 2019 TechInsights’ Analysis of Solutions from Samsung, Toshiba, and Intel/Micron TechInsights’ analysis has begun on the much-anticipated 9XL 3D NAND solutions, including: Samsung 92L 3D V-NAND Toshiba 96L 3D BiCS Intel/Micron 96L
发布:2019年4月9日特约作者:丹尼尔Yang & Stacy Wegner It’s here. It’s in our labs... Two major 5G events happened last week: Verizon launched their 5G network in Chicago, and on the other side of the globe, Samsung launched the world
(Semiconductor Engineering) The big challenge is to characterize the inner portions of a 3D NAND device, which consists of complex materials, multiple layers and tiny channel holes. Then, as you add more layers, the metrology challenges increase “due
Posted: February 7, 2019 Contributing Authors: Marty Bijman and Jim Hines Figure 1 – Tesla's portfolio including Maxwell and SolarCity acquisitions Figure 2 – Tesla Portfolio landscapes showing which inventions originated from Tesla, SolarCity, and
Originally Presented: October 4, 2018 / 12:00 pm - 1:00 pm EDT Hosted By: Martin Bijman & George Pappas Patent strengthening is the term that refers to the process of achieving the greatest potential for value from a patent during the prosecution –